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 CXA3510N
4ch. Read/Write Amplifier for Thin Film Head of Hard Disk Drive
For the availability of this product, please contact the sales office.
Description The CXA3510N is a Read/Write Amplifier for the thin film head of hard disk drive and designed to handle up to 4 channel heads. Features * Operate on single +5 V power supply * Low power consumption Read : 85 mW Write : 115 mW + IW x 5 Idle : 8 mW * Designed for two terminal thin-film or MIG heads * Read amplifier emitter follower output featuring 360 times gain (typ). * Differential input capacitance for Read : 6pF (typ) * Input noise : 0.47 nV / Hz (typ) * Write current range : 5 to 15 mA * Differential Head voltage swing : 9 Vp-p (typ) * IW Rise / Fall times : 3.7 ns (typ) * * * * * * * (LH=540 nH, RH=25 , IW=10 mA) Differential P-ECL write data input Built-in write unsafe detection circuit. Built-in Servo write function (2/4 ch). Built-in IC protection circuit for short of head to GND. Read data outputs are high impedance in write mode. Unselected head voltage is GND potential. Built-in supply voltage monitor circuit prohibits incorrect write during power on or abnormal voltage. Self switching damping resistance (RD = 360 ). 20 pin SSOP (Plastic)
Absolute Maximum Ratings (Ta=25 C) * Supply voltage VCC 6 V * Write current IW 20 mAo-p * Operating temperature Topr -20 to +75 C * Storage temperature Tstg -55 to +150 C * Allowable power dissipation PD 620 mW * WUS/SE pin input current ISEH 15 mA
Recommended Operating Conditions * Supply voltage VCC 5.0 V10 % * Write current IW 5 to 15 mAo-p
*
Function Read, Write and Write unsafe detection for HDD, power supply ON/OFF detection. Structure Bipolar silicon monolithic IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
--1--
E99201
CXA3510N
Block Diagram and Pin Configuration
GND
1
MODE CONTROL
20
XCS
H0X
2
DRIVER
19 R/W
H0Y
3
AMP
WRITE CURRENT SOURCE
18 WC
H1X
4
DRIVER AMP
17
RDY
H1Y
5
AMP
16
RDX
H2X
6
DRIVER
15 HS0 HEAD SELECT
H2Y
7
AMP
14 HS1
H3X
8
DRIVER
13 IC PROTECTOR
WDX
H3Y
9
AMP
12
WDY
VCC
10
POWER ON/OFF DETECTOR
WRITE UNSAFE DETECTOR
11 WUS/SE
--2--
CXA3510N
Pin Description No. 1 Symbol GND
2 4
VCC
Equivalent circuit
Description
2 3 4 5 6 7 8 9
H0X H0Y H1X H1Y H2X H2Y H3X H3Y
6 8
2k 2k
3 5 7 9
100k
Head. 4 channels provided.
GND
10
VCC
5 V power supply.
VCC
11
WUS/SE
11
Write unsafe detection output / Servo Enable signal input.
GND
VCC
12 13
WDY WDX
12 13
Differential P-ECL write data input.
GND
--3--
CXA3510N
No.
Symbol
Equivalent circuit
VCC
Description
14 15
HS1 HS0
14 15 2.1V GND VCC
Head select signal input. Selects one of 4 heads according to Table 2.
100k
16 17
RDX RDY
16
Read Amplifier output.
17
GND VCC
18
WC
18 2.5V GND
A setting resistor for the write current value is connected between this pin and GND.
VCC
100k
19
R/W
19
Read/Write signal input At "High" : Read, at "Low" : Write.
2.1V GND
VCC
20
XCS
20
Power save signal input At "High" : Power saving.
100k 2.1V GND
--4--
Electrical Characteristics
(Unless otherwise specified, VCC=5 V, Ta=25 C, Write current IW=15 mA) Refer to Fig.1 1 a 11 16 +IW +IW 1.6 1.0 22 17 a Test point : l2 Test point : I2 a a a a a b a a b a a b a b a a a a b a a b a a b a a a a a a b a a b a a b b a Test point : l2 26 36 +IW 2.3 0.8 2.0 -100 100 2 3 4 5 SW conditions 6 7 8 9 10 11 12 13 14 Measurement conditions Min. Typ. Max. Unit mA mA mA V V A A V V Input voltage : 4 V 50 0.3 b a a a a a a a a a a a b b a c c b c a c a b b a a a a Output current : 1 mA Test point : V1 Test point : l3 0.5 50 A V V A
CXA3510N
No.
Item
Symbol
1-1
ICCR
1-2
ICCW
1-3
ICCI
2-1 Digital input : Pins 14, 15, 19, 20
VIL
2-2 a a a a a a b a a b b b b b b a a a a b a a b a a b a a
VIH
2-3
IIL
--5-- a a a a a b a a b a a b a a
2-4
IIH
"High" applied voltage : 5 V "Low" applied voltage : 0 V Test point : l6, l7, l8, I9
2-5
VWDL
2-6
VWDH
VWDH -2.0 VCC -1.1
VWDH -0.25 VCC -0.4
2-7
IWD
2-8
Vunsel
3-1
VWUS
3-2
Current consumption for Read Current consumption for Write Current consumption for idle Digital input "Low" input voltage Digital input "High" input voltage Digital input "Low" input current Digital input "High" input current Write data input "Low" input voltage Write data input "High" input voltage Write data input current Unselected head voltage Write unsafe output saturation voltage Write unsafe output leak current
IWUS
No. 1 When VCC is lowered from 5 V in 2 3 4 Min. Typ. Max. Unit
Item
Symbol Measurement conditions
SW conditions 5 6 7 8 9 10 11 12 13 14
4 3.4 3.9 V and IW starts to flow, VCC voltage is set to VTHON. 5 a IW=AW * VWC/RWC b IW=KW/RWC Servo write enabled b a a a a b b a b a a b a a Servo write enabled a a a a b a a b a a b a a a a a a b a a b a a b a a 2.25 18 45 VCC +1.5 5 2.5 20 50
Supply power ON/OFF detector threshold voltage b a a a a a b a a b a b a a Write mode and IW does not flow anymore, VCC voltage is set to VTHOFF. When VCC is raised from 3 4.3
VTH
V
5-1
Write current setting range
IW
15 2.75
mAo-p V 22 mA/mA 55 VCC +1.6 14 V
5-2
Write current voltage
VWC
5-3
Write current gain
AW
5-4
Write current setting constant
KW
--6-- b a a a c b a a b a a b b a b a a a c b a a b a a b b a
6-1
WUS/SE voltage
VSEH
6-2
WUS/SE sink current
ISEH
mA
7
Read amplifier differential voltage gain
AV
305
360
415
V/V
8
Frequency band width (-3 dB)
BW
Input voltage SG1 : 1 mVp-p, 300 kHz Load resistance (RDX, RDY) : 1 k Test point : V4 [Vp-p] V4 AV = SG1 Frequency at which AV lowers by 3 dB
100
140
MHz
CXA3510N
No. 1 2 3 4 Min. Typ. Max. Unit
Item
Symbol Measurement conditions
SW conditions 5 6 7 8 9 10 11 12 13 14
9
Input referred noise
EN a a a a a b a a b a a b b a
Head impedance : 0 , when the read amplifier output voltage is amplified 100 times and voltage passed though a LPF (low pass filter of cutoff frequency 15 MHz) is VN [Vrms], 0.47 0.6 nV Hz EN =
10
Common mode rejection ration b a a a d b a a b a a b b a
CMRR
50
dB
--7-- a a a a a a a a b a a b b a
11
Power supply rejection ratio
PSRR
VN 100 * AV 15 x 106 Test point : V5 In-phase input voltage SG2 : 100 mVp-p, 20 MHz When the Read amplifier output is VCM [mVp-p], 100 CMRR = 20 log VCM +20 log AV Test point : V4 Ripple voltage SG3 : 100 mVp-p, 20 MHz When the Read amplifier output is VP [mVp-p], 100 PSRR = 20 log VP +20 log AV Test point : V4 50
dB
CXA3510N
No. 1 2 3 4 Measurement conditions Min. Typ. Max. Unit
Item
Symbol
SW conditions 5 6 7 8 9 10 11 12 13 14
12 50
Channel separation a b a a c b a a b a a b b a
CS
dB
13
VOFFR a a a a e b a a b a a a b a
Selected head input voltage : 0 mVp-p Unselected head input voltage SG1 : 100 mVp-p, 20 MHz When the Read amplifier output is VCS [mVp-p], 100 CS = 20 log VCS +20 log AV Test point : V4 VOFFR = V2-V3 Test point : V2, V3 -250 250 mV
--8-- a a a a e b a a b a a b c a a a a a e b a a b a a a b a
14
Read data output offset voltage for Read RDX, RDY common mode output voltage difference between modes Test point : Pin 16, 17
Vdiff
-300
300
mV
15
RDX, RDY common mode output voltage for Read
VRD
Test point : V2, V3
VCC -2.6
VCC VCC -2.3 -2.0
V
CXA3510N
CXA3510N
Unless otherwise specified, VCC=5 V, Ta=25 C, fWD (Write data frequency) =5 MHz, IW=15 mA, LH (Head inductance) =1 H, RH (Head DC resistance value) =30 Refer to Fig. 2 to Fig. 4 No. Item Head differential voltage amplitude Symbol Measurement conditions Differential voltage between HX pin and HY pin at switching of Write current TRW is the time required for Write current to turn TRW to 90 % after Pin 19 changes from "High" to "Low". TWR1 is the time required for the Read amplifier output to turn to 90 % after Pin 19 changes from "Low" to "High". TWR2 is the time required for Write current to decreases to 10 % after Pin 19 changes from "Low" to "High". TIR is the time required for the Read amplifier output to turn to 90 % after Pin 20 changes from "High" to "Low". TSA1 is the time required for Pin 11 to turn "High" after the last transition of Write data 1.0 when Write data is stopped in Write mode. TSA2 is the time required for Pin 11 to turn "Low" after the first transition of Write data in Write mode. TH is the time required for the Read amplifier output to reach 90 % when the selected head switched in Read mode. TPD is the time required for Write current to reach 90 % after the Write data falling edge. TR is the time required for Write current to reach 90 % from 10 %; TF is the same time required to reach 10 % from 90 %. LH=0 H, RH=0 LH=540 nH, RH=25 , IW=10 mA TR is the time required for Write current to reach 90 % from 10 %; TF is the same time required to reach 10 % from 90 %. 130 150 ns Min. Typ. Max. Unit
14
VSW
9
Vp-p
Mode switching time 15-1 Read to Write
TWR1 15-2 Mode switching time Write to Read TWR2 Mode switching time Power saving to Read Mode switching time safe to unsafe Mode switching time unsafe to safe
180 220
ns
100 200
ns
16
TIR
1
s
17-1
TSA1
2.3
3.0
s
17-2
TSA2
0.6
s
18
Head switching time Write current propagation delay time
TH
0.6
s
19
TPD
2
7
ns
Write current 20-1 rise/fall time
TR/TF
1
3
ns
20-2
Write current rise/fall time
TR/TF
3.7
ns
Read amplifier output 100 mVp-p 10 MHz
--9--
CXA3510N
Test Circuit 1
1k LPF x100
AMP
1k
1
VCC 5V
VCC 5V
A
SG3 ab I2 S6 1 SG6 V3 1 V2 PG SG5 PG SG4 5.1k I14 6.5V
V
V5
to15MHz x1
AMP
V
V4 PG 5V ab abc S13 ba ba ab ab
V
V
3V abc S9 4V abc S8 ab S7
A
V
V1
S14
S12 3.3k 18 17 16
S11
S10
A
I9 20
A
I8 19
A
I7 15
A
I6 14
A
I5 13
A
I4 12
A
I3 11
1
2
S1 ab
3
4
S2 ab
5
6
S3 ab
7
8
S4 ab
9
10
ab
ab
ab
ab
S5 abc d e abcd e 0.1 SG2 0.1 33 0.1
A
I1
Fig. 1
SG1
Test Circuit 2
1k x1
AMP
1k
1
1 PG PG 3.3k
1 PG PG PG 5.1k
20
19
18
17
16
15
14
13
12
11
1
2
LH 1H
3
4
LH 1H
5
6
LH 1H
7
8
LH 1H
9
10 5V
--10--
Fig. 2
CXA3510N
Timing Chart 1
WDX WDY
R/W
50%
50%
PS
50%
TRW
TWR 2
90% IWX IWY 10%
90% 10% TWR1 TIR
RDX RDY
90%
90%
Fig. 3 Timing Chart 2
WDX WDY
TPD 90% 10% TR 90% 90% 10% TF TSA1
IWX IWY
WUS TSA2
50%
50%
Fig. 4
--11--
CXA3510N
Description of Functions Read amplifier This is a low noise amplifier for amplifying the signals from the heads with an emitter follower output. The RDX and RDY are the outputs of the differential amplifier whose polarity between the RDX and X side of the head input is same. Write circuit The Write data input to WDX pin and WDY pin passes through the buffer amp. It drives the Write switch circuit which supplies the Write current to the heads. The Write current flows into the X side when WDX is "Low" and WDY is "High". Mode control The mode are set as shown Table 1 by XCS, R/W and WUS/SE. XCS R/W WUS/SE HS0 HS1 L L X See Table 2 L H X L L See Table 3 H X X X X Table 1. Mode selection Head selection The heads are selected as shown in Table 2 by the HS0 and HS1 pins. HS0 HS1 Head L L 0 H L 1 L H 2 H H 3 Table 2. Head selection Servo write mode This mode allows for writing to multiple channels at once. To enable servo write mode follow these steps: (1) Place the device in the Read mode. (2) Set HS0 and HS1 following Table 3. (3) Set WUS/SE to VSEH, or input ISEH to WUS/SE. (4) While maintaing step (2) and (3) above make R/W low, placing the device in servo write mode.
Mode Write Read Servo Write Power saving
--12--
CXA3510N
Write unsafe detection circuit This circuit detects write errors. In normal Write mode, the WUS output is low; in the conditions listed below, it is high. * Head inputs is open (under the condition which. RH= and Write data frequency is 10 MHz) * Head input is shorted to GND or VCC. * Write data frequency is abnormally low. * No write current. * In read mode. * Supply voltage is abnormal (see power supply ON/OFF detection). Power supply ON/OFF detection This circuit monitors VCC to detect erroneous Writes. The error status is established when VCC falls below the threshold voltage (VTH) of the power supply ON/OFF detector, in which case the recording and playback functions are prohibited. When VCC rises above, VTH, the prohibition of these functions is released. HS0 HS1 Head L L 0, 1 H L 0, 1, 2, 3 L H 2, 3 H H 0, 1, 2, 3 Table 3. Head selection in Servo Write mode
--13--
CXA3510N
Application Circuit
PULSE DETECTOR RWC 3.3k
1
5.1k
20
19
18
17
16
15
14
13
12
11
1
2
LH 1H
3
4
LH 1H
5
6
LH 1H
7
8
LH 1H
9
10
5V
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
--14--
CXA3510N
Notes on operation * This device handles high frequency and high gain signals. Please note the following; Connect VCC decoupling capacitor of approximately 1000 pF near the device. Make the GND area as large as possible. * When using as 2-channel, short-circuit the X and Y sides of unused head pins or leave them open. * The WC pin is a constant voltage pin. When noise affects this pin, it creates noise in Write current. Therefore, locate RWC as close to the device as possible. * Write unsafe detection circuit This circuit uses the voltage waveforms of the head pins for detection.
Wave form of write data
Voltage waveform of head pins (HX, HY)
VFB
VTH=1.4V VTH GND
VFB must be more than 2 V. When VFB < 2 V, it is possible that Write unsafe detection maximum frequency becomes more than 1 MHz. The normal operating area of write unsafe detection circuit is changed by head inductance, head DC resistance, write current and other.
--15--
CXA3510N
Application Notes Use the following characteristics for reference. Item Differential output capacitance Differential output resistance Differential input capacitance Read mode Differential input resistance Output resistance Unselected head differential current in Write mode Write mode Write current symmetry TAS=T1-T2 Symbol CO RO CI RI RRD IUS TAS Conditions Between head input pins Between head input pins f=5 MHz RDX or RDY, f=5 MHz LH=1 H, RH=30 IW=15 mA LH=0 H, RH=0 IW=15 mA
VCC=5 V, Ta=25 C Min. Typ. Max. 4.5 6 260 360 470 6 10 650 1500 3000 50 Unit pF pF
0.2 mAp-p -0.5 0.5 ns
IWX+IWY
50% T1
50% T2
50%
WC
Setting of Write current Write current can be set with resistor RWC (k) at Pin 18. IW=K/RWC (mA) Refer to Fig. 5.
18 RWC
Fig.5 Write current vs. RWC
Fig.6 Write current setting constant vs. Write current
Write current setting constant K
20
55
IW-Write current (mA)
52.5 K=RWC *IW 50
10
5
47.5
45 2 5 RWC (k) 10 15 4 6 8 10 12 14 16
Write Current IW (mA)
--16--
CXA3510N
Normalized write current vs. Supply voltage 1.04 Ta=25C RWC=3.3k 1.04
Normalized write current vs. Ambient temperature VCC=5V RWC=3.3k
IW/IW (Ta=25C)
IW/IW (VCC=5V)
1.02
1.02
1
1
0.98
0.98
0.96 4 5 Supply voltage VCC [V] 6
0.96 -25 0 25 50 75
Ambient temperature Ta [C]
Normalized read amplifier voltage tgain vs. Supply voltage 1.04 Ta=25C 1.04
Normalized read amplifier voltage gain vs. Ambient temperature VCC=5V
1
AV/AV (Ta=25C)
AV/AV (VCC=5V)
1.02
1.02
1
0.98
0.98
0.96 4 5 Supply voltage VCC [V] 6
0.96 -25 0 25 50 75
Ambient temperature Ta [C]
Power supply ON/OFF detector threshold voltage vs. Ambient temperature 4.2
Power supply ON/OFF Detector Threshold Voltage [V]
OFF ON 4
ON OFF 3.8
3.6 -25 0 25 50 75 Ambient temperature Ta [C]
--17--
CXA3510N
Package Outline
Unit : mm
20PIN SSOP (PLASTIC)
6.5 0.1 + 0.2 1.25 - 0.1 0.1 20 11 A
4.4 0.1
1
10 0.65
b
0.13 M
+ 0.05 0.15 - 0.02
(0.22) 0.1 0.1
b=0.22 0.03
0.5 0.2
DETAIL B : SOLDER
(0.15)
DETAIL B : PALLADIUM
NOTE: Dimension "" does not include mold protrusion. 0 to 10
PACKAGE STRUCTURE
DETAIL A
PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE SSOP-20P-L01 SSOP020-P-0044 LEAD TREATMENT LEAD MATERIAL PACKAGE MASS EPOXY RESIN SOLDER / PALLADIUM PLATING 42/COPPER ALLOY 0.1g
NOTE : PALLADIUM PLATING This product uses PdPPF (Palladium Pre-Plated Lead Frame).
--18--
+ 0.03 0.15 - 0.01
+ 0.1 b=0.22 - 0.05
6.4 0.2


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